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Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs | IEEE Conference Publication | IEEE Xplore

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs


Abstract:

The impact of the dynamic variability due to low frequency and RTS fluctuations on single MOSFET operation from 28nm FD-SOI technology is investigated for the first time....Show More

Abstract:

The impact of the dynamic variability due to low frequency and RTS fluctuations on single MOSFET operation from 28nm FD-SOI technology is investigated for the first time. It is shown that, for small rise time of ramp gate voltage, the drain current characteristics Id(Vg) exhibit a huge sweep-to-sweep dispersion due to the low frequency noise. Such a single device dynamic variability, which scales as the reciprocal square root of device area, is added to the static mismatch contribution and could amount up to ≈30% of static variability sources.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
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Conference Location: Venice Lido, Italy

References

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