Abstract:
The impact of the dynamic variability due to low frequency and RTS fluctuations on single MOSFET operation from 28nm FD-SOI technology is investigated for the first time....Show MoreMetadata
Abstract:
The impact of the dynamic variability due to low frequency and RTS fluctuations on single MOSFET operation from 28nm FD-SOI technology is investigated for the first time. It is shown that, for small rise time of ramp gate voltage, the drain current characteristics Id(Vg) exhibit a huge sweep-to-sweep dispersion due to the low frequency noise. Such a single device dynamic variability, which scales as the reciprocal square root of device area, is added to the static mismatch contribution and could amount up to ≈30% of static variability sources.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
ISBN Information: