Variability in device degradations: Statistical observation of NBTI for 3996 transistors | IEEE Conference Publication | IEEE Xplore

Variability in device degradations: Statistical observation of NBTI for 3996 transistors


Abstract:

Degradations of thousands of transistors have been observed in a practical time. A novel device array circuit suitable for measurement-based statistical characterization ...Show More

Abstract:

Degradations of thousands of transistors have been observed in a practical time. A novel device array circuit suitable for measurement-based statistical characterization has been devised to facilitate parallel stress bias application to capture negative bias temperature instability (NBTI). The experimental results show that log-normal distributions approximate the distribution of power-law exponents very well and that the variation in magnitude of threshold voltage shifts bears an inverse relation to the channel areas of transistors. The variability in degradations under an AC-stress condition is also presented for the first time.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
ISBN Information:

ISSN Information:

Conference Location: Venice Lido, Italy

References

References is not available for this document.