Loading [a11y]/accessibility-menu.js
Parameters extraction on HfOX based RRAM | IEEE Conference Publication | IEEE Xplore

Parameters extraction on HfOX based RRAM


Abstract:

In this work, a novel methodology including the extraction strategy and characterization procedure is developed to extract the physical parameters which dominate the swit...Show More

Abstract:

In this work, a novel methodology including the extraction strategy and characterization procedure is developed to extract the physical parameters which dominate the switching characteristics of HfOX based RRAM devices. With the extracted parameters, the retention behaviors of HfOX based RRAM devices are simulated by the atom-level simulation tool and compared with the measurement. The agreement between the simulation and measurement verifies the validity of the developed methodology.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
ISBN Information:

ISSN Information:

Conference Location: Venice Lido, Italy

References

References is not available for this document.