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3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs | IEEE Conference Publication | IEEE Xplore

3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs


Abstract:

A 3-D analytical and physics-based compact model for extremely scaled junctionless (JL) triple-gate nanowire (TG-NW) MOSFETs is presented. Based on Poisson's equation and...Show More

Abstract:

A 3-D analytical and physics-based compact model for extremely scaled junctionless (JL) triple-gate nanowire (TG-NW) MOSFETs is presented. Based on Poisson's equation and the conformal mapping technique, a compact solution for the electrostatics is derived in 3-D. A current expression is presented, which is continuous in all regions of device operation, and which takes into account the specific behavior of JL transistors. The model is compared versus measurement and simulated data of JL TG-NW MOSFETs, whereby the structural model parameters equal the values given by the fabricated devices. Important electrical parameters, such as threshold voltage VT, drain-induced barrier lowering (DIBL) and subthreshold slope S are worked out.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
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Conference Location: Venice Lido, Italy

References

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