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Silicon LEDs in FinFET technology | IEEE Conference Publication | IEEE Xplore

Silicon LEDs in FinFET technology


Abstract:

We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emissi...Show More

Abstract:

We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
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Conference Location: Venice Lido, Italy

References

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