Abstract:
We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emissi...Show MoreMetadata
Abstract:
We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
ISBN Information: