TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime | IEEE Conference Publication | IEEE Xplore

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime


Abstract:

In high-voltage integrated circuits operating at high temperatures, charge transport phenomena can occur in the encapsulation layer as a consequence of the electric field...Show More

Abstract:

In high-voltage integrated circuits operating at high temperatures, charge transport phenomena can occur in the encapsulation layer as a consequence of the electric field spreading out from the high-voltage bondpads/bondwires. In this work, the most relevant features of epoxy resins commonly used in the high-voltage packaging industry have been modelled and implemented in a commercial TCAD tool. Although the study has been performed on a 2D simulation domain, it is shown that very good agreement with measurements can be obtained, provided that appropriate boundary conditions are taken into account. The TCAD investigation highlights the role played by metallization and wires during a high-voltage stress over a wide temperature range.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
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Conference Location: Venice

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