Abstract:
In this work we have investigated the impact of Off State Stress (OSS) on nMOSFETs in High-K/Metal Gate (HKMG) technology. Although in standard poly-SiO2/SiON devices the...Show MoreMetadata
Abstract:
In this work we have investigated the impact of Off State Stress (OSS) on nMOSFETs in High-K/Metal Gate (HKMG) technology. Although in standard poly-SiO2/SiON devices the impact of OSS is relatively limited and causes an increase in VTH, in the case of HKMG larger degradation is observed, with negative VTH shift. A significant increase of the device Off state leakage is observed, causing a serious issue for high voltage and low power oriented circuits.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
ISBN Information: