Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications | IEEE Conference Publication | IEEE Xplore

Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications


Abstract:

This work reports multi-VT Ge gate stacks using low energy plasma-assisted doping (PLAD) with N2 for Ge p-FinFET applications. Varying implant dose and energy is used to ...Show More

Abstract:

This work reports multi-VT Ge gate stacks using low energy plasma-assisted doping (PLAD) with N2 for Ge p-FinFET applications. Varying implant dose and energy is used to demonstrate effective TiN work-function tuning over a range of 170 mV from near-midgap to near-valence band edge of Ge without significant impact on gate capacitance (effective oxide thickness (EOT)), interface quality and TiN resistance. However, unlike Si gate stacks, increased gate leakage in implanted samples is likely due to traps created in the HfO2 Hi-k layer and exposed to channel carriers due to a low band offset GeO2 interfacial layer.
Date of Conference: 14-18 September 2015
Date Added to IEEE Xplore: 12 November 2015
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Conference Location: Graz, Austria

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