Abstract:
In this paper, the impact of metallic lanthanum (La) deposited by Radio-Frequency PVD on effective work function (WFeff) of HfON-based NFET devices in a sacrificial metal...Show MoreMetadata
Abstract:
In this paper, the impact of metallic lanthanum (La) deposited by Radio-Frequency PVD on effective work function (WFeff) of HfON-based NFET devices in a sacrificial metal gate-first approach is evaluated for the first time. Engineering of WFeff towards N+ without leakage degradation is demonstrated by tuning both the pedestal TiN thickness and the as-deposited metallic La dose. WFeff shift is related to a La-induced interfacial dipole (5), whose value has been correlated to the effective La dose into HfON/SiON stack after diffusion annealing, which has been accurately measured through a spectroscopic method based on La X-Ray Fluorescence (XRF).
Date of Conference: 14-18 September 2015
Date Added to IEEE Xplore: 12 November 2015
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