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A full-quantum simulation study of InGaAs NW MOSFETs including interface traps | IEEE Conference Publication | IEEE Xplore

A full-quantum simulation study of InGaAs NW MOSFETs including interface traps


Abstract:

The interaction between strain and border traps in short-channel InGaAs NW MOSFETs is investigated through full-quantum 3D simulations based on a k·p Hamiltonian. Traps i...Show More

Abstract:

The interaction between strain and border traps in short-channel InGaAs NW MOSFETs is investigated through full-quantum 3D simulations based on a k·p Hamiltonian. Traps induce a sizable degradation of the ON-current, which can be recovered through the application of a suitable strain, provided the quantization effects, which increase by scaling the NW lateral size, do not become too large.
Date of Conference: 12-15 September 2016
Date Added to IEEE Xplore: 20 October 2016
ISBN Information:
Electronic ISSN: 2378-6558
Conference Location: Lausanne, Switzerland

References

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