On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes | IEEE Conference Publication | IEEE Xplore

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes


Abstract:

Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated in this paper. Capacitance and current relaxation measurements on diode...Show More

Abstract:

Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-VDP (Van Der Pauw) are associated with temperature dependent dynamic Ron transients analysis showing that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation layer and in a carbon related hole trap in the GaN buffer layers (Ea = Et − Ev ∼ 0.9eV). These two parasitic effects can lead to long recovery time (> 1ks) after reverse bias stress.
Date of Conference: 11-14 September 2017
Date Added to IEEE Xplore: 16 October 2017
ISBN Information:
Electronic ISSN: 2378-6558
Conference Location: Leuven, Belgium

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