Back-gate bias effect on UTBB-FDSOI non-linearity performance | IEEE Conference Publication | IEEE Xplore

Back-gate bias effect on UTBB-FDSOI non-linearity performance


Abstract:

This work investigates experimentally the non-linearities of FDSOI MOSFETs from DC to RF frequencies. The effect of the back-gate bias on non-linearity of the device is s...Show More

Abstract:

This work investigates experimentally the non-linearities of FDSOI MOSFETs from DC to RF frequencies. The effect of the back-gate bias on non-linearity of the device is studied by means of 2nd and 3rd harmonic distortions (HD2 and HD3) extracted from dc I-V curves as well as from large-signal RF measurements using 1-dB and IP3 points. It is shown that the non-linearity is reduced by applying a positive back-gate bias. The reasons for this reduction are increasing of “effective body factor” and lesser mobility degradation with increase of the positive back-gate bias.
Date of Conference: 11-14 September 2017
Date Added to IEEE Xplore: 16 October 2017
ISBN Information:
Electronic ISSN: 2378-6558
Conference Location: Leuven, Belgium

References

References is not available for this document.