This work investigates, in detail, the electrically gate-all-around (eGAA) Hexagonal NW FET (HexFET) which combines the high current drive of FinFETs with the excellent electrostatic robustness of conventional Gate-All-Around Nanowire (GAA NW) FETs. We evaluate HexFET as a potential successor to FinFET for 5nm node logic and SRAM applications using first principles atomistic-based modeling, calibrated 3D numerical device simulations, and circuit-level benchmarking. From this, we conclude that the eGAA HexFET architecture offers superior performance to both FinFET and GAA NW FET for 5nm node applications.