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Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM | IEEE Conference Publication | IEEE Xplore

Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM


Abstract:

We investigate the switching of a symmetric square and an elongated rectangular perpendicular free layer by spin-orbit torque with a magnetic field-free two-pulse scheme....Show More

Abstract:

We investigate the switching of a symmetric square and an elongated rectangular perpendicular free layer by spin-orbit torque with a magnetic field-free two-pulse scheme. The switching of the layer is achieved by utilizing the in-plane shape anisotropic magnetic field. For making the switching of a symmetric square layer deterministic, an in-plane stray field created in a part of the layer is used. The combination of the shape and stray fields accelerates the switching of the free layer significantly. A switching speedup factor of 3 to 5 has been obtained. The strategy also improves the robustness of the scheme allowing fast, sub-0.5 ns switching, less sensitive to the pulses’ properties.
Date of Conference: 23-26 September 2019
Date Added to IEEE Xplore: 18 November 2019
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Conference Location: Cracow, Poland

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