Abstract:
The improvement of forming gas anneal (10 % H2in N2) at 400°C on electrical properties of Ge/GeOx/Tm2O3/HfO2 gate stacks is investigated. It is found that forming gas ann...Show MoreMetadata
Abstract:
The improvement of forming gas anneal (10 % H2in N2) at 400°C on electrical properties of Ge/GeOx/Tm2O3/HfO2 gate stacks is investigated. It is found that forming gas anneal effectively suppresses fixed charge density, oxide trap density and interface state density. Hydrogen is demonstrated to efficiently passivate the negative fixed charge density and reduce the global variability of the flatband voltage down to 90 mV over a wafer. A forming gas anneal is also found to reduce equivalent oxide thickness in scaled gate stacks.
Date of Conference: 13-22 September 2021
Date Added to IEEE Xplore: 13 December 2021
ISBN Information: