Abstract:
In this paper, we demonstrate III-V HBTs fabricated on GaAs/InGaP layers realized by merging the nano-ridges to create a bulk-like stack on a 300 mm Si substrate. The emi...Show MoreMetadata
Abstract:
In this paper, we demonstrate III-V HBTs fabricated on GaAs/InGaP layers realized by merging the nano-ridges to create a bulk-like stack on a 300 mm Si substrate. The emitter-base and base-collector diodes show an ideality factor of ∼1.2 and ∼2.0, respectively. A maximum DC current gain of ∼120 and breakdown voltage, BVCBO, of 10 V is achieved at Ft ∼17GHz. A direct correlation between threading dislocation density (TDD) and various device metrics is shown using DC, RF and reliability measurements. Furthermore, 3D Monte Carlo simulations were done to model and understand the impact of different types of merged structures on the thermal performance of the device. With this work, we show the potential of merged nano-ridges, in enabling an efficient hybrid III-V/CMOS technology for mm-wave applications, as a material-independent tool to understand the impact of defects on the performance of III-V devices.
Date of Conference: 19-22 September 2022
Date Added to IEEE Xplore: 18 November 2022
ISBN Information: