Abstract:
This paper presents compact model for carbon nanotube field effect transistor (CNTFET) which is derived from electronic structure of carbon nanotube (CNT). Complete curre...Show MoreMetadata
Abstract:
This paper presents compact model for carbon nanotube field effect transistor (CNTFET) which is derived from electronic structure of carbon nanotube (CNT). Complete current transport model is developed from carrier concentration in CNT for different chirality. The model describes the variation of charge developed on CNT with gate voltage. I-V characteristics have been efficiently modeled and compact model is developed for HSPICE circuit simulations. Finally 6T static random access memory (SRAM) cell is designed with developed model and analysis is done for various performance metrics. Results show that CNTFET based 6T-SRAM consumes very less standby power with high static noise margins.
Published in: 2016 IEEE 5th Global Conference on Consumer Electronics
Date of Conference: 11-14 October 2016
Date Added to IEEE Xplore: 29 December 2016
ISBN Information: