This paper presents a high-speed CMOS half-bridge gate driver for a GaN-based DC-DC converter used in 5G telecom power and industrial power supplies, integrated with real-time microcontrollers. The driver features an advanced dual-edge delay-locked loop dead-time control technique and introduces a VSW leading edge control loop to mitigate reverse conduction losses during high-frequency operation. Additionally, it incorporates CBST voltage control to prevent gate damage from overcharging and floating level shifters to ensure signal accuracy during high-speed operations. Fabricated using a 0.18μm BCD process, the driver IC shows a significant reduction in reverse conduction time, achieving a 7.5% efficiency improvement over conventional fixed dead-time control at 0.3A.