Abstract:
We propagate the uncertainty of measurements used for the identification of a transistor nonlinear model to microwave load-pull simulations. The results are presented for...Show MoreMetadata
Abstract:
We propagate the uncertainty of measurements used for the identification of a transistor nonlinear model to microwave load-pull simulations. The results are presented for a 0.15-μm GaAs pHEMT under class-AB regime at different frequencies of operation.
Date of Conference: 22-25 May 2017
Date Added to IEEE Xplore: 07 July 2017
ISBN Information: