Abstract:
In this paper, the temperature dependence of electrical behavior on amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) having plasma-enhanced chemical vapor depos...Show MoreMetadata
Abstract:
In this paper, the temperature dependence of electrical behavior on amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) having plasma-enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS) oxide as the dielectric material was evaluated. Sub-threshold swing (SS) increases and Vth is negatively shifted as the temperature rises. Temperature-dependent sub-threshold characteristics were also observed for the fabricated a-IGZO TFTs. The increase in sub-threshold current in a-IGZO TFTs is well described by the thermally activated electrons.
Date of Conference: 06-09 July 2013
Date Added to IEEE Xplore: 07 October 2013
ISBN Information: