UV nonvolatile sensor by using SONOS capacitor device | IEEE Conference Publication | IEEE Xplore

UV nonvolatile sensor by using SONOS capacitor device


Abstract:

The silicon-oxide-nitride-oxide-silicon (SONOS) capacitor devices can be candidates for nonvolatile ultraviolet UV radiation sensors. In the case of SONOS type UV radiati...Show More

Abstract:

The silicon-oxide-nitride-oxide-silicon (SONOS) capacitor devices can be candidates for nonvolatile ultraviolet UV radiation sensors. In the case of SONOS type UV radiation sensors, the UV radiation induces a significant increase of threshold voltage for SONOS by UV-assisted-low-gate-voltage program. The change of threshold voltage for SONOS after UV ray expose has a correlation to the dose of UV ray exposure. In this paper, the performance of capacitor types of SONOS used for UV sensor was studied. The data of SONOS UV radiation sensors wrote by UV-assisted-low-gate-voltage program was nonvolatile at least for 1 month. The SONOS capacitor device with ONO gate dielectric in this study has demonstrated the feasibility for UV nonvolatile sensor application.
Date of Conference: 06-09 July 2013
Date Added to IEEE Xplore: 07 October 2013
ISBN Information:
Conference Location: Hsinchu, Taiwan

References

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