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5G FR2-Band PA Performance Degradation in 40-nm GaN HEMTs with Potential Design Solutions | IEEE Conference Publication | IEEE Xplore

5G FR2-Band PA Performance Degradation in 40-nm GaN HEMTs with Potential Design Solutions


Abstract:

Performance degradation and reliability concerns were verified after repeated measurements were taken on radio-frequency (RF) power amplifiers (PAs) designed in our lab u...Show More

Abstract:

Performance degradation and reliability concerns were verified after repeated measurements were taken on radio-frequency (RF) power amplifiers (PAs) designed in our lab using an advanced 40-nm Gallium Nitride on Silicon Carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) technology. In this work, we show two 5G PAs in the FR2 band, one that consists of a common-source (CS) device driving a CS second stage (i.e., CS/CS PA), and a second that consists of a CS device driving and a 2-stack second stage (i.e., CS/2-stack PA). Drain current (ID) of both PAs was seen to vary by a considerable amount under constant gate-to-source voltage (VGS) biasing, especially while the device remained biased on, both with and without an RF signal present. Additionally, gain and saturated output power (POUT,SAT) degradation of ~ 3 dB was observed in our CS/2-stack PA in measurements using increasing levels of drain biasing (VDS) without exceeding device DC breakdown. The degradation seen is consistent with electron trapping effects commonly seen in advanced HEMT technologies. Supply modulation such as envelope tracking (ET) and other techniques that reduce DC biasing and limit the time the devices are on will likely help improve device reliability.
Date of Conference: 09-11 July 2024
Date Added to IEEE Xplore: 18 September 2024
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Conference Location: Taichung, Taiwan

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