Recent progress in MOS device physics, model development, and model implementation processes has qualitatively changed the capabilities of compact models precisely at a time when the rapid expansion of RF MOSFET applications is imposing the most stringent demands on the new generation of MOSFET models. This work reviews the impact of the new modeling paradigm on MOSFET circuit simulation with particular attention to RF issues, non-quasi-static effects, and symmetric surface-potential-based models. General principles are illustrated with the simulation results using the latest generation compact MOSFET model (SP).