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Modeling and analysis of through silicon via: Electromagnetic and device simulation approach | IEEE Conference Publication | IEEE Xplore

Modeling and analysis of through silicon via: Electromagnetic and device simulation approach

Publisher: IEEE

Abstract:

Most existing approaches for analysis of 3D interconnects are solely based on using Maxwell's equations with the semiconductor substrate modeled as a lossy medium. The no...View more

Abstract:

Most existing approaches for analysis of 3D interconnects are solely based on using Maxwell's equations with the semiconductor substrate modeled as a lossy medium. The nonlinear nature of semiconductor substrate has been generally ignored. In order to understand the physical mechanisms behind effects such as semiconductor nonlinearity, it is necessary to describe the semiconductor as nonlinear solid state plasma i.e. using device simulator. This paper addresses the main difference between electromagnetic and device simulators, and the need for combining the carrier transport equations of charged carriers and Maxwell's equations to accurately model 3D interconnects.
Date of Conference: 09-12 December 2012
Date Added to IEEE Xplore: 18 February 2013
ISBN Information:
Publisher: IEEE
Conference Location: Seville, Spain

References

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