Variability of nanoscale triple gate FinFETs: Prediction and analysis method | IEEE Conference Publication | IEEE Xplore

Variability of nanoscale triple gate FinFETs: Prediction and analysis method


Abstract:

Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characterist...Show More

Abstract:

Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characteristics of FinFETs. A simplified version of the model behaves almost as good as the analytical model but is more computational time efficient. Implementation of the models in verilog-A can be used to predict variability in circuits such as the inverter.
Date of Conference: 07-10 December 2014
Date Added to IEEE Xplore: 26 February 2015
Electronic ISBN:978-1-4799-4242-8
Conference Location: Marseille, France

References

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