Abstract:
This work presents a comparison of resilience between a 32nm Bulk and a 28nm Fully-Depleted Silicon On Insulator (FDSOI) transistor to heavy ion impacts on the Drain regi...Show MoreMetadata
Abstract:
This work presents a comparison of resilience between a 32nm Bulk and a 28nm Fully-Depleted Silicon On Insulator (FDSOI) transistor to heavy ion impacts on the Drain region. The impacts were performed in different transistor locations at different impact angles whereas previous works considered the impact just at a 0 degree angle. This comparison is performed with the device in the off-state using 2D TCAD simulations. The results show a 7.7 times improved resilience of the FDSOI transistor compared to that of Bulk MOSFET.
Date of Conference: 06-09 December 2015
Date Added to IEEE Xplore: 24 March 2016
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