Abstract:
p-microcrystalline-silicon/n-crystalline-silicon hetero-junction solar cell has been prepared by means of hot-wire chemical vapor deposition (HW-CVD) technique. The solar...View moreMetadata
Abstract:
p-microcrystalline-silicon/n-crystalline-silicon hetero-junction solar cell has been prepared by means of hot-wire chemical vapor deposition (HW-CVD) technique. The solar cell structure was illuminated on the opposite side of the normally-formed heterojunction. With this inverted structure, the photovoltaic cell has the design potential increasing the light-incident surface texturing and it avoids the use of transparent conducting oxide (TCO). The HW-CVD has employed for the deposition of a very thin intrinsic hydrogenated amorphous silicon (i-a-Si) as a buffer-layer, and boron-doped hydrogenated microcrystalline silicon (p-μc-Si) on crystalline-silicon (c-Si) substrate. Solar cells were fabricated on Czochralsky (CZ)-grown phosphorous-doped c-Si within 0.5 to 1 ohm-cm. The tungsten catalyst temperature (T
fil
) was settled to 1600 °C and 1950 °C for i-a-Si and p-μc-Si films, respectively. Silane (SiH
4
) and hydrogen (H
2
) gases were used and diluted diborane (B
2
H
6
) for p-doping at the substrate temperatures (T
sub
) of 200 °C. The obtained I-V characteristics under simulated solar radiation at 100mW/cm
2
are: Jsc =26.1 mA/cm
2
; Voc = 545 mV; Jm = 21.4 mA/cm
2
; Vm = 410 mV; FF = 61.7%, with total area efficiency of η = 8.8%.
Published in: 2010 7th International Conference on Electrical Engineering Computing Science and Automatic Control
Date of Conference: 08-10 September 2010
Date Added to IEEE Xplore: 25 October 2010
ISBN Information: