Abstract:
In this work we study the atomic composition in SiGe:H films as a function of hydrogen dilution. Silane and germane fluxes are kept constant while hydrogen flow is varyin...Show MoreMetadata
Abstract:
In this work we study the atomic composition in SiGe:H films as a function of hydrogen dilution. Silane and germane fluxes are kept constant while hydrogen flow is varying to achieve dilutions up to 80 times. Solid content of principle elements as well as contaminants are determined by SIMS. For low dilutions (from 9 to 30), germanium solid content strongly depends on hydrogen dilution since it varies from 0.485 to 0.675. Higher presence of hydrogen in the mixture does not change germanium content which remains close to the value of 0.69.
Published in: 2015 12th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)
Date of Conference: 28-30 October 2015
Date Added to IEEE Xplore: 17 December 2015
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