Memristors have been used in various applications, including single- and multi-bit storage units. The non-linear voltage-current relation in memristors is often seen as a problem, necessitating complex circuits and methods for a reliable write-in. In this paper, we take advantage of this phenomenon for storing more than one bit of information in a single memristor using digital bit streams. First, we demonstrate how two bits of information can be stored and read back from a single memristor unit. Then, we propose encoding schemes that can enhance the reliability of digitally writing two and three bits of data in a single memristor. To verify the reliability of this method for multi-bit data storage, we have run simulations based on the most prominent simulation models available.