A new topology called Enhanced Boost Active Switched Impedance-qZSI (EBASZ-QZSI) was introduced in this paper. This topology has a high voltage gain value with a smaller duty cycle compared to the previous topology. This topology also offers lower current ripple values and voltage stresses compared to the previous topology under the same conditions. Analysis of the proposed EBASZ-qZSI topology comprises working principle, boost factor, voltage gain, capacitor voltage stress, current ripple accros inductors, and diode reverse voltage stress. These key parameters are then compared with the previous high boost qZSI topology and demonstrated through simulation software. The results showed that the proposed EBASZ-qZSI topology is a potential single stage converter to be applied in PV-grid integration.