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Advances of the development of a ferroelectric field-effect transistor on Ge(001) | IEEE Conference Publication | IEEE Xplore
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Advances of the development of a ferroelectric field-effect transistor on Ge(001)

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Patrick Ponath; Agham B. Posadas; Yuan Ren; Xiaoyu Wu; Keji Lai; Alex Demkov
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Abstract:

Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate b...Show More

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Abstract:

Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 on Ge. Recent results of patterning BaTiO3 for device applications and electrical properties of Pt/BTO/Ge heterostructures will be addressed.
Published in: 2017 IEEE International Conference on IC Design and Technology (ICICDT)
Date of Conference: 23-25 May 2017
Date Added to IEEE Xplore: 27 July 2017
ISBN Information:
DOI: 10.1109/ICICDT.2017.7993524
Conference Location: Austin, TX, USA
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