With the fast development in IOT (Internet Of Things) and portable intelligent product markets, VLSI continually scales down. As the candidates for the small scale memory, several new types of non-volatile memory (NVM) memory such as RRAM, MRAM, PRAM have made great process in these years. Their area, work speed, and application flexibility are the advantage compared with traditional NVM. In this paper, we focus on the Resistor Random Access Memory (RRAM) and propose a new write verification technique. By this method, we can achieve a high reliability for write access. Also the write scheme for RRAM can be simplified.