Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures | IEEE Conference Publication | IEEE Xplore

Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures

Publisher: IEEE

Abstract:

In this work, the Ni/AlO x /Pt RRAM device was fabricated with solution-processed AlO x thin film at different annealing temperatures (150/200/250/300/350°C). The suprem...View more

Abstract:

In this work, the Ni/AlO x /Pt RRAM device was fabricated with solution-processed AlO x thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 10 4 s and endurance over 10 2 cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.
Date of Conference: 17-19 June 2019
Date Added to IEEE Xplore: 08 August 2019
ISBN Information:
Print on Demand(PoD) ISSN: 2381-3555
Publisher: IEEE
Conference Location: Suzhou, China

References

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