Abstract:
In this work, the Ni/AlO x /Pt RRAM device was fabricated with solution-processed AlO x thin film at different annealing temperatures (150/200/250/300/350°C). The suprem...View moreMetadata
Abstract:
In this work, the Ni/AlO
x
/Pt RRAM device was fabricated with solution-processed AlO
x
thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 10
4
s and endurance over 10
2
cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.
Date of Conference: 17-19 June 2019
Date Added to IEEE Xplore: 08 August 2019
ISBN Information:
Print on Demand(PoD) ISSN: 2381-3555