Abstract:
This paper describes a low temperature drift Z-axis silicon gyroscope with a low temperature sensitivity interface circuit. The gyroscope's temperature drift is optimized...Show MoreMetadata
Abstract:
This paper describes a low temperature drift Z-axis silicon gyroscope with a low temperature sensitivity interface circuit. The gyroscope's temperature drift is optimized from two aspects: MEMS structure and its interface circuit design. Firstly, the sources of zero rate output(ZRO) are analyzed, and then we point out that improving the stability of demodulation phase can reduce thermal drift effectively. A careful designed MEMS structure with wafer level package is introduced and a novel interface circuit is proposed to improve gyroscope's phase stability. Then the newly designed gyroscope is tested, its bandwidth is above 100Hz with a full scale of ±300°/s. In room temperature environment, its bias stability(1a) achieves 0.78°/h, with a temperature coefficient of 6.4°/h/°C in full temperature range (-40°C-60°C).
Published in: 2016 IEEE SENSORS
Date of Conference: 30 October 2016 - 03 November 2016
Date Added to IEEE Xplore: 09 January 2017
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