Abstract:
The impact of high temperature ion implantation on the electrical performances of 4H-SiC MOSFETs is investigated. The effect of single-step high temperature ion implantat...Show MoreMetadata
Abstract:
The impact of high temperature ion implantation on the electrical performances of 4H-SiC MOSFETs is investigated. The effect of single-step high temperature ion implantation in P-well, N+, P+ regions and that of three-step implantations are compared firstly. It is found that neither high temperature ion implantation of N+ nor P+ can obviously improve the ohmic contact characteristics. The variations in electrical parameters are analyzed, showing that three-step high temperature ion implantations have made contribution to the improvements of Vth and RDSON. Therefore, it is significant to improve the performance of SiC MOSFETs by using three-step high temperature ion implantations.
Published in: 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
Date of Conference: 24-26 November 2021
Date Added to IEEE Xplore: 03 January 2022
ISBN Information: