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Admittance spectroscopy for planar and across measure configuration of metal/porous silicon/Si structures | IEEE Conference Publication | IEEE Xplore

Admittance spectroscopy for planar and across measure configuration of metal/porous silicon/Si structures


Abstract:

In this paper two Porous Silicon (PS) measure configuration (Al/PS/p-Si/Al and Al/PS/Al) are presented. Admittance as a function of frequency and dc bias voltage were in ...Show More

Abstract:

In this paper two Porous Silicon (PS) measure configuration (Al/PS/p-Si/Al and Al/PS/Al) are presented. Admittance as a function of frequency and dc bias voltage were in detail analyzed. Admittance spectroscopy is a power tool in the study of semiconductors. We find out conductance and susceptance of single and multilayer structures. Moreover this diagnostic technique gives information about structural properties of investigated material.
Date of Conference: 06-10 July 2014
Date Added to IEEE Xplore: 14 August 2014
Electronic ISBN:978-1-4799-5601-2

ISSN Information:

Conference Location: Graz, Austria

References

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