Abstract:
In this paper, a fault injection and simulation approach is used to study effects of resistive and capacitive defects on the faulty behavior of Oxide-based Resistive Memo...Show MoreMetadata
Abstract:
In this paper, a fault injection and simulation approach is used to study effects of resistive and capacitive defects on the faulty behavior of Oxide-based Resistive Memory RAM devices (OxRRAM). During the memory operations, logical and electrical characteristics of each memory cell of an elementary array are evaluated by using a bipolar OxRRAM compact model calibrated on actual devices. Simulation results are analyzed in terms of OxRRAM electrical characteristic variations to evaluate the robustness of the memory array against injected defects, inherent to the routing circuitry.
Date of Conference: 11-14 December 2011
Date Added to IEEE Xplore: 05 January 2012
ISBN Information: