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Single-ended sense amplifier robustness evaluation for OxRRAM technology | IEEE Conference Publication | IEEE Xplore

Single-ended sense amplifier robustness evaluation for OxRRAM technology


Abstract:

In this paper, impact of OxRRAM cell variability on circuit performances is analyzed quantitatively at a circuit level. A single-ended sense amplifier architecture is eva...Show More

Abstract:

In this paper, impact of OxRRAM cell variability on circuit performances is analyzed quantitatively at a circuit level. A single-ended sense amplifier architecture is evaluated against memory cell variability. This study enables enhancing OxRRAM yield as well as reducing cell consumption during a read operation without compromising reliability. Due to the stochastic nature of the switching process in OxRRAMs, leading to large variability, all simulations are Monte Carlo oriented.
Date of Conference: 16-18 December 2013
Date Added to IEEE Xplore: 30 January 2014
Electronic ISBN:978-1-4799-3525-3

ISSN Information:

Conference Location: Marrakesh, Morocco

References

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