This paper presents an experimental evaluation of the half-bridge converter based on new 900V SiC MOSFEs. The converter is tested with pure inductive load at various switching frequencies and power levels to test overall performance of the devices. Transistors operate as a part of different switch scenarios: MOSFET (with body diode), MOSFET+SiC Schottky and finally with additional parallel capacitors. All performed tests conform excellent performance of SiC transistors, however, an optimal configuration is with parallel capacitors. Near to ZVS conditions lead to reduction of transistor's power losses by 28 per cent.