In this paper, a comparative performance evaluation of a 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module is carried out under a series of different conditions such as similar dv/dt, di/dt, voltage overshoot, current overshoot, and ringings. Both the modules are commercially available in a standard plastic package and have the same stray inductances. Various parameters such as switching speed, energy loss, and overshoots are experimentally measured in order to address the comparative advantages and disadvantages of the selected modules. This paper demonstrates that SiC MOSFET can replace Si IGBT of similar voltage class or even higher voltage class, both in slow and fast switching applications.