The recently emerging SiC devices provide a promising solution to improve power converter efficiency and power density. However the expensive cost limited the widely use of SiC device. The parallel connection of SiC MOSFET and Si IGBT is introduced in this paper to utilize the advantage of this two different kinds of devices and proposed corresponding switching strategies. The switching loss and current distribution of hybrid switch is simulated in LTspice. Performances of different switching strategies for the hybrid switch are evaluated using a simplified simulation circuit to prove the advantage of hybrid and proposed switching strategies.