Abstract:
This paper proposed an approach to transferring nonlinear parasitic drain-source capacitance of MOSFET to a linear model by charge-related equivalent conversion. It is ap...Show MoreMetadata
Abstract:
This paper proposed an approach to transferring nonlinear parasitic drain-source capacitance of MOSFET to a linear model by charge-related equivalent conversion. It is applied to a previously researched analytical model of the class-D inverter to add its feasibility in high frequency. Based on the proposed approach, the relationship between maximum operation frequency, the nonlinear capacitance, and the input voltage are inferred and verified by spice simulation, resulting in good consistency.
Date of Conference: 17-20 October 2022
Date Added to IEEE Xplore: 09 December 2022
ISBN Information: