Abstract:
In this work, we improved switching reliability with respect to memory window, switching variability and switching yield of 65nm CMOS integrated hafnium oxide (HfO2) base...Show MoreMetadata
Abstract:
In this work, we improved switching reliability with respect to memory window, switching variability and switching yield of 65nm CMOS integrated hafnium oxide (HfO2) based RRAM devices by SET/RESET process optimization. Switching performance of 1 transistor 1 RRAM (1T1R) cells as a function of operating current, SET/RESET pulse width and amplitude were investigated in depth, and full 300mm wafer scale switching optimization for the devices was demonstrated. The devices were also optimized for long cycling endurance (up to 109 cycles) and retention behavior at 373 K.
Published in: 2021 IEEE International Memory Workshop (IMW)
Date of Conference: 16-19 May 2021
Date Added to IEEE Xplore: 31 May 2021
ISBN Information:
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