Abstract:
Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those ...Show MoreMetadata
Abstract:
Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.
Date of Conference: 27-29 June 2012
Date Added to IEEE Xplore: 27 September 2012
ISBN Information: