TDDB improvement of copper/dielectric in the highly-integrated BEOL structure for 28nm technology node and beyond | IEEE Conference Publication | IEEE Xplore

TDDB improvement of copper/dielectric in the highly-integrated BEOL structure for 28nm technology node and beyond


Abstract:

Here we demonstrate the copper/dielectric TDDB improvement of 8 metal layers in 28nm technology node with 90 nm pitch. After the process optimization, the Weibull slope o...Show More

Abstract:

Here we demonstrate the copper/dielectric TDDB improvement of 8 metal layers in 28nm technology node with 90 nm pitch. After the process optimization, the Weibull slope of MOM TDDB increase from 0.85 to 1.28 that improves the estimated MOM TDDB about 200 times.
Date of Conference: 19-23 April 2015
Date Added to IEEE Xplore: 01 June 2015
Electronic ISBN:978-1-4673-7362-3

ISSN Information:

Conference Location: Monterey, CA, USA

References

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