Abstract:
We show and discuss some general features of dielectric breakdown of ultra-thin gate oxides for CMOS. We discuss III-V devices with high-k/metal gate, and compare to more...Show MoreMetadata
Abstract:
We show and discuss some general features of dielectric breakdown of ultra-thin gate oxides for CMOS. We discuss III-V devices with high-k/metal gate, and compare to more classical structures with silicon substrates, SiOxNy or high-k as gate dielectrics, and poly-Si or metal gate. A model of the breakdown growth dependence on voltage, temperature, oxide thickness, etc., is discussed and compared to data.
Published in: 2015 IEEE International Reliability Physics Symposium
Date of Conference: 19-23 April 2015
Date Added to IEEE Xplore: 01 June 2015
Electronic ISBN:978-1-4673-7362-3
Contents 