Abstract:
A new TDDB lifetime model is proposed to predict lifetime for AC inverter-like stress in FinFET device. The AC lifetime is governing by four mechanisms, including voltage...Show MoreMetadata
Abstract:
A new TDDB lifetime model is proposed to predict lifetime for AC inverter-like stress in FinFET device. The AC lifetime is governing by four mechanisms, including voltage switching, electron detrapping, HCI and hole injection. Among them, voltage switching and electron detrapping improve TDDB lifetime; while HCI and hole injection degrade the lifetime.
Published in: 2015 IEEE International Reliability Physics Symposium
Date of Conference: 19-23 April 2015
Date Added to IEEE Xplore: 01 June 2015
Electronic ISBN:978-1-4673-7362-3
Contents 