Conductive filaments multiplicity as a variability factor in CBRAM | IEEE Conference Publication | IEEE Xplore

Conductive filaments multiplicity as a variability factor in CBRAM


Abstract:

In this work we investigate the origin of the resistance variability for the low resistive state in conductive bridging memory devices (CBRAM). We use C-AFM tomography to...Show More

Abstract:

In this work we investigate the origin of the resistance variability for the low resistive state in conductive bridging memory devices (CBRAM). We use C-AFM tomography to enable the three-dimensional observation of the filaments and correlate the presence of double-branched conductive filaments to the variability in the device performance.
Date of Conference: 19-23 April 2015
Date Added to IEEE Xplore: 01 June 2015
Electronic ISBN:978-1-4673-7362-3

ISSN Information:

Conference Location: Monterey, CA, USA

References

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