Abstract:
In this work we investigate the origin of the resistance variability for the low resistive state in conductive bridging memory devices (CBRAM). We use C-AFM tomography to...Show MoreMetadata
Abstract:
In this work we investigate the origin of the resistance variability for the low resistive state in conductive bridging memory devices (CBRAM). We use C-AFM tomography to enable the three-dimensional observation of the filaments and correlate the presence of double-branched conductive filaments to the variability in the device performance.
Published in: 2015 IEEE International Reliability Physics Symposium
Date of Conference: 19-23 April 2015
Date Added to IEEE Xplore: 01 June 2015
Electronic ISBN:978-1-4673-7362-3