Abstract:
Charge trapping in the gate-oxide can cause significant degradation and reduce the operating lifetime of the device. Here, we study the kinetics of charge trapping in the...Show MoreMetadata
Abstract:
Charge trapping in the gate-oxide can cause significant degradation and reduce the operating lifetime of the device. Here, we study the kinetics of charge trapping in the InGaAs/Al2O3/HfO2 gate-stack using Capture and Emission Time (CET) maps. The existence of two oxide defect bands, respectively above and below the conduction band of InGaAs, is implied by sensing charge trapping at positive and negative oxide electric fields. Within each band, two distinct populations of defect states are observed. The first defect population with relatively higher capture and emission energy barriers is found to affect the long term reliability of the device since the charge trapping in these defect states is slow, while the second population with relatively smaller capture and emission energy barriers affects the device stability particularly under high frequency operation. We argue that it is essential to characterize and study both defect populations in order to accurately estimate device lifetime under different operating applications.
Date of Conference: 11-15 March 2018
Date Added to IEEE Xplore: 03 May 2018
ISBN Information:
Electronic ISSN: 1938-1891