Impact of self-heating effect (SHE) has been studied on FinFET devices under dynamic stress. A large channel temperature increase is observed under On-State stress which leads to degradation of TDDB, however, less impact of Off-State stress is observed on TDDB. MC simulators are developed to predict Off-State, On-State and Dynamic TDDB stress. It is shown that SHE in FinFETs leads to TDDB degradation only at higher bias, however, at use conditions; SHE has little impact for both NMOS & PMOS devices.